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> Ericsson 20111 85 watts 860–900 mhz rf power transistor
Ericsson 20111 85 watts 860–900 mhz rf power transistor
The 20111 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
25 Volt, 860 900 MHz Characteristics
- Collector Efficiency = 50% at 85 Watts
- IMD = -30 dBc Max at 60 W(PEP)
http://datasheet.digchip.com/154/154-3-130727-PTB20111.pdf
