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> Igbt HGTG5N120BND 1200V 21A w. recovery diode TO247 X2
Igbt HGTG5N120BND 1200V 21A w. recovery diode TO247 X2
The HGTG5N120BND are Non- Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The Diode used is Part number RHRD6120.
